Sell Thermal Paste○❆♠IRF1010E/F1010E N-CHANNEL MOSFET ORIGINAL best price

IRF1010E is an n-channel enhancement MOSFET designed for high speed switching applications. It also has low turn ON resistance. Like any other MOSFET the IRF1010E is voltage controlled device and MOSFET state is decided by GATE voltage. IRF1010E Features and Specifications Advanced process technology Fully avalanche rated Fast switching Fifth generation HEXFET Maximum voltage across DRAIN and SOURCE: 60V Maximum continuous current allowed trough DRAIN: 81A Maximum pulsed DRAIN current: 330A Maximum voltage across GATE and SOURCE:20 V Maximum operating Temperature: 175ºC Maximum power dissipation: 170Watt IRF1010E Equivalents IRF1407, IRFB4110, IRFB4110G, IRFB4115, IRFB4310Z, IRFB4310ZG, IRFB4410 Where to Use IRF1010E? There are many reasons for using IRF1010E, here are a few: When you want a high speed SWITCHING device for MEDIUM POWER LOADS. As mentioned above IRF1010E is specially designed for high speed switching of medium power loads so it is fairly popular in those areas. When you want low drop switching device. The MOSFET has very low turn ON resistance leading to very low drop during ON condition, which is a must condition in some applications. With low drop the MOSFET power loss will be less. With less power loss the efficiency of the system will be more. So the MOSFET is preferred for high efficiency applications. Applications Basically any switching applications speed control units Lighting systems PWM applications Relay drivers Switch mode power supply