Sell RJP30H1 RJP30H1DPD TO-252 Silicon N Channel IGBT High Speed best price

NOTE: Price stated is for 1 piece only. Ad photo of many are just for "viewing purposes only". You're just buying 1 piece. Ok? RJP30H1 RJP30H1DPD TO-252 Silicon N Channel IGBT High Speed Power Switching Features: Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 uA max. Datasheet: h t t p : / / p d f 1 . a l l d a t a s h e e t . c o m / d a t a s h e e t - p d f / v i e w / 4 5 1 3 5 4 / R E N E S A S / R J P 3 0 H 1 D P D . h t m l Package Includes: 1 x RJP30H1 RJP30H1DPD TO-252 Silicon N Channel IGBT High Speed Power Switching