Sell Original IRFP260N Brand New N-Channel MOSFET Transistor best price

·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pulsed 200 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.5 ℃/W Rth(j-a) Channel-to-ambient thermal resistance 40 ℃/W #IRFP260N #MOSFET #TRANSISTOR