Kingston 8GB DDR3 1600Mhz 8GB DDR3L 1600Mhz PC3-12800S 204Pin SODIMM 1.5V/1.35V RAM Laptop Memory (1)
Kingston 8GB DDR3 1600Mhz 8GB DDR3L 1600Mhz PC3-12800S 204Pin SODIMM 1.5V/1.35V RAM Laptop Memory (2)
Kingston 8GB DDR3 1600Mhz 8GB DDR3L 1600Mhz PC3-12800S 204Pin SODIMM 1.5V/1.35V RAM Laptop Memory (3)
Kingston 8GB DDR3 1600Mhz 8GB DDR3L 1600Mhz PC3-12800S 204Pin SODIMM 1.5V/1.35V RAM Laptop Memory (4)
Kingston 8GB DDR3 1600Mhz 8GB DDR3L 1600Mhz PC3-12800S 204Pin SODIMM 1.5V/1.35V RAM Laptop Memory (5)
Kingston 8GB DDR3 1600Mhz 8GB DDR3L 1600Mhz PC3-12800S 204Pin SODIMM 1.5V/1.35V RAM Laptop Memory (6)

Sell Kingston 8GB DDR3 1600Mhz 8GB DDR3L 1600Mhz PC3-12800S 204Pin SODIMM 1.5V/1.35V RAM Laptop Memory best price

4.7
36
ratings
38
sold
₱2,281
Brand
Kingston.
Ships from
Quezon City, Metro Manila
Voltage
1.35V 8G DDR3L 1600
1.5V 8G DDR3L 1600
DESKTOP DDR3 8G 1600

Product Description

WELCOME TO OUR PHILIPPINE LOCAL STORE. QUALITY -ASSURED - - - - - LIFETIME WARRANTY. FAST DELIEVERY IN 1-2 DAYS FROM MANILA BIG BIG DISCOUNT THAN ANY OTHERS STORE. GOOD SERVICE --- 24 HOURS ONLINE CAN ANSWER ANY CONFUSION. 😍😍 😍😍 WHY NOT MAKE A ORDER. LET TAKE IT NOW. !!! 😍😍 😍😍 Kingston 8GB DDR3 1600Mhz 8GB DDR3L 1600Mhz PC3-12800S 204Pin SODIMM 1.5V/1.35V RAM Laptop Memory KVR16LS11/8 8GB 2Rx8 1G x 64-Bit PC3L-12800 CL11 204-Pin SODIMM DESCRIPTION This document describes ValueRAM's 1G x 64-bit (8GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8, low voltage, memory module, based on sixteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: FEATURES ? JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply ? VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) ? 800MHz fCK for 1600Mb/sec/pin ? 8 independent internal bank ? Programmable CAS Latency: 11, 10, 9, 8, 7, 6 ? Programmable Additive Latency: 0, CL - 2, or CL - 1 clock ? 8-bit pre-fetch ? Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] ? Bi-directional Differential Data Strobe ? Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) ? On Die Termination using ODT pin ? Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C ? Asynchronous Reset ? PCB: Height 1.18” (30mm), double sided component SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power (1.35V) = 2.721W* UL Rating 94 V - 0 Operating Temperature 0o C to 85o C Storage Temperature -55o C to +100o C *Power will vary depending on the SDRAM.

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