INTEL 512GB 660P M.2 PCIE NVME 3.0 X4 (6GBPS) (SSDPEKNW512G8X1) SOLID STATE DRIVE t0Vq (1)
INTEL 512GB 660P M.2 PCIE NVME 3.0 X4 (6GBPS) (SSDPEKNW512G8X1) SOLID STATE DRIVE t0Vq (2)
INTEL 512GB 660P M.2 PCIE NVME 3.0 X4 (6GBPS) (SSDPEKNW512G8X1) SOLID STATE DRIVE t0Vq (3)
INTEL 512GB 660P M.2 PCIE NVME 3.0 X4 (6GBPS) (SSDPEKNW512G8X1) SOLID STATE DRIVE t0Vq (4)
INTEL 512GB 660P M.2 PCIE NVME 3.0 X4 (6GBPS) (SSDPEKNW512G8X1) SOLID STATE DRIVE t0Vq (5)
INTEL 512GB 660P M.2 PCIE NVME 3.0 X4 (6GBPS) (SSDPEKNW512G8X1) SOLID STATE DRIVE t0Vq (6)
INTEL 512GB 660P M.2 PCIE NVME 3.0 X4 (6GBPS) (SSDPEKNW512G8X1) SOLID STATE DRIVE t0Vq (7)

Sell INTEL 512GB 660P M.2 PCIE NVME 3.0 X4 (6GBPS) (SSDPEKNW512G8X1) SOLID STATE DRIVE t0Vq best price

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₱16,644
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Tondo I / Ii, Metro Manila

Product Description

PCIe* Performance at an Affordable Price Twice the Capacity in Identical Footprints Performance and Price That Matters Essentials Capacity 512 GB Status Launched Launch Date 03’18 Lithography Type 3D2 QLC Use Conditions PC/Client/Tablet Performance Sequential Read (up to) 1500 MB/s Sequential Write (up to) 1000 MB/s Random Read (8GB Span) (up to) 90000 IOPS Random Write (8GB Span) (up to) 220000 IOPS Power – Active 0.1 W Power – Idle 0.040W Reliability Vibration – Operating 2.17 GRMS Vibration – Non-Operating 3.13 GRMS Shock (Operating and Non-Operating) 1000 G Operating Temperature Range 0°C to 70°C Endurance Rating (Lifetime Writes) 100 TBW Mean Time Between Failures (MTBF) = 1.6 million hours Uncorrectable Bit Error Rate (UBER) 1 sector per 10^15 bits read Package Specifications Weight 10 grams Form Factor M.2 22 x 80mm Interface PCIe NVMe 3.0 x4 Advanced Technologies Enhanced Power Loss Data Protection No Hardware Encryption AES 256 bit High Endurance Technology (HET) No Temperature Monitoring and Logging No End-to-End Data Protection Yes Intel® Smart Response Technology Yes Intel® Remote Secure Erase No Intel® Rapid Start Technology Yes

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