Sell ✙❂﹍HY1906/HY1906P N-CHANNEL MOSFET best price
0
ratings
₱352
50% OFF
₱176
| Ships from | Makati City, Metro Manila |
|---|---|
| Variation | HY1906P |
Product Description
Type Designator: HY1906P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 188 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 876 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
