Sell 1PC LOT TIP41C / TIP42C TRANSISTOR best price

NPN TIP41 = 40V TIP41A=60V TIP41B=80V TIP41C=100V PNP TIP42=40V TIP42A=60V TIP42B=80V TIP42C=100V Electrical Characteristics TC=25°C unless otherwise noted * Pulse Test: PW≤300µs, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C 40 60 80 100 V V V V VCEO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C 40 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 65 W PC Collector Dissipation (Ta=25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : TIP41 : TIP41A : TIP41B : TIP41C IC = 30mA, IB = 0 40 60 80 100 V V V V ICEO Collector Cut-off Current : TIP41/41A : TIP41B/41C VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.7 0.7 mA mA ICES Collector Cut-off Current : TIP41 : TIP41A : TIP41B : TIP41C VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 400 400 400 400 µA µA µA µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA hFE * DC Current Gain VCE = 4V,IC = 0.3A VCE = 4V, IC = 3A 30 15 75 VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V VBE(sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 6A 2.0 V fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 3.0 MHz